symbol value unit reverse voltage v r 100 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate (note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature range t j ,t stg ?55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse breakdown voltage (i r = 100 adc) v (br) 100 ? vdc reverse voltage leakage current (v r = 20 vdc) (v r = 75 vdc) i r ? ? 25 5.0 nadc adc diode capacitance (v r = 0, f = 1.0 mhz) c t ? 4.0 pf forward voltage (i f = 10 madc) v f ? 1.0 vdc reverse recovery time (i f = i r = 10 madc) (figure 1) t rr ? 4.0 ns 1. fr?5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. marking diagram 5d 5d = device code
rating maximum ratings 1 3 2 sot-23 LMBD914LT1 high?speed switching diode features ? pb?free package may be available. the g?suffix denotes a pb?free lead finish device package shipping ? ordering information LMBD914LT1g sot?23 (pb?free) 3000/tape & reel LMBD914LT1 sot?23 3000/tape & reel product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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